2010-02-01
Modified reflection in birefringent layers of core-shell semiconductor nanowires
Publication
Publication
Semicond. Sci. Technol. , Volume 25 - Issue 2, Article number: 24008 p. 1- 5
Birefringent layers of GaP nanowires are grown by metal-organic vapor phase epitaxy on top of a GaP substrate. We modified the reflection of the as-grown layer by adding a shell of 12 nm of SiO2 around the nanowires. The effect of the shell on the effective refractive indices of the birefringent nanowire layer was calculated using Maxwell-Garnett effective medium theory for coated cylinders. The large change of the reflection due to the shell renders nanowire layers a promising material for sensing applications.
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doi.org/10.1088/0268-1242/25/2/024008 | |
Semicond. Sci. Technol. | |
Diedenhofen, S. L., & Gómez Rivas, J. (2010). Modified reflection in birefringent layers of core-shell semiconductor nanowires. Semicond. Sci. Technol., 25(2, Article number: 24008), 1–5. doi:10.1088/0268-1242/25/2/024008 |