1994
Transient diffusion of Ga in amorphous silicon
Publication
Publication
J. Appl. Phys. , Volume 76 p. 5719- 5723
The redistribution of Ga in amorphous silicon (a-Si) in the temperature range of 560-830 K by means of medium-energy ion scattering has been studied. During the initial 10 s of the annealing the diffusivity shows a transient behavior that is attributed to the change in the relaxation state of the amorphous matrix. From 560 to 830 K the diffusivity during relaxation is enhanced by seven to two orders of magnitude compared to the value for bulk a-Si. Possible models that show the observed transient diffusion behavior are discussed.
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| J. Appl. Phys. | |
| Organisation | Photonic Materials |
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Zagwijn, P. M., Huisman, W. J., Polman, A., Vlieg, E., Reader, A. H., & Gravesteijn, D. J. (1994). Transient diffusion of Ga in amorphous silicon. J. Appl. Phys., 76, 5719–5723. |
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