Separating the contributions of hydrogen and structural relaxation to damage annealing in a-Si:H

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Publisher	Materials Research Society
Editor	E.A. Schiff , M.J. Thompson , A. Madan , K. Tanaka , P.G. Lecomber
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Stolk, P. A., Berntsen, A., Saris, F. W., & van der Weg, W. F. (1993). Separating the contributions of hydrogen and structural relaxation to damage annealing in a-Si:H. In E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, & P. G. Lecomber (Eds.), Amorphous Silicon Technology, 1993 : Symposium held April 13-16, 1993, San Francisco, California, U.S.A. (pp. 127–132).

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