Electrically active, ion implanted boron at the solubility limit in silicon

1993

Appl. Phys. Lett. , Volume 63 p. 1134- 36

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Journal	Appl. Phys. Lett.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Liefting, J. R., Schreutelkamp, R., Vanhellemont, J., Vandervorst, W., Maex, K., Custer, J. S., & Saris, F. W. (1993). Electrically active, ion implanted boron at the solubility limit in silicon. Appl. Phys. Lett., 63, 1134–36.

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