The energy dependence of ion damage in AlxGa1-xAs/GaAs heterostructures and the effects of implanted impurity

1992

Additional Metadata
Publisher	Materials Research Society
Editor	G.S. Was , L.E. Rehn , D.M. Follstaedt
Organisation	Photonic Materials
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Cullis, A. G., Jacobson, D. C., Polman, A., Smith, P. W., Poate, J. M., & Whitehouse, C. R. (1992). The energy dependence of ion damage in AlxGa1-xAs/GaAs heterostructures and the effects of implanted impurity. In G. S. Was, L. E. Rehn, & D. M. Follstaedt (Eds.), Phase Formation and Modification by Beam-Solid Interactions : Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. (pp. 229–234).

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