2006
1µm saturable absorber with recovery time reduced by lattice mismatch
Publication
Publication
Appl. Phys. Lett. , Volume 89 - Issue Article number: 71112 p. 1- 3
Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ~5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.
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| doi.org/10.1063/1.2337278 | |
| Appl. Phys. Lett. | |
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Suomalainen, S., Guina, M., Hakulinen, T., Okhotnikov, O. G., Euser, T. G., & Marcinkevicius, S. (2006). 1µm saturable absorber with recovery time reduced by lattice mismatch. Appl. Phys. Lett., 89(Article number: 71112), 1–3. doi:10.1063/1.2337278 |
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