Strain relaxation during the surfactant modified epitaxial growth of Ge/Si(001)

1992

Surf. Sci. , Volume 273 p. 1- 8

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Journal	Surf. Sci.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Thornton, J. M. C., Williams, A. A., MacDonald, J. E., van Silfhout, R., Finney, M. S., & Norris, C. (1992). Strain relaxation during the surfactant modified epitaxial growth of Ge/Si(001). Surf. Sci., 273, 1–8.

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