Reduction of secondary defect formation in MeV As ion implanted Si(100)

1991

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Journal	Nucl. Instrum. Methods Phys. Res. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Schreutelkamp, R., Lu, W. X., Liefting, J. R., Raineri, V., Custer, J. S., & Saris, F. W. (1991). Reduction of secondary defect formation in MeV As ion implanted Si(100). Nucl. Instrum. Methods Phys. Res., Sect B, 59/60, 614–618.

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