Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces

1990

Phys. Rev. B , Volume 42 p. 9598- 9608

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Journal	Phys. Rev. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Vrijmoeth, J., van der Veen, J. F., Heslinga, D. R., & Klapwijk, T. M. (1990). Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces. Phys. Rev. B, 42, 9598–9608.

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