Raman study of de-relaxation and defects in amorphous silicon induced by MeV ion beams

1990

Appl. Phys. Lett. , Volume 56 p. 2097- 2099

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Journal	Appl. Phys. Lett.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Roorda, S., Poate, J. M., Jacobson, D. C., Dennis, B. S., Dierker, S., & Sinke, W. (1990). Raman study of de-relaxation and defects in amorphous silicon induced by MeV ion beams. Appl. Phys. Lett., 56, 2097–2099.

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