Epitaxial explosive crystallization of amorphous silicon layers buried in a silicon (100) and (111) matrix

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Publisher	Materials Research Society
Editor	N.W. Cheung , A.D. Marwick , J.B. Roberto
Organisation	Photonic Materials
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Stolk, P. A., Polman, A., & Sinke, W. (1989). Epitaxial explosive crystallization of amorphous silicon layers buried in a silicon (100) and (111) matrix. In N. W. Cheung, A. D. Marwick, & J. B. Roberto (Eds.), Ion Beam Processing of Advanced Electronic Materials : Symposium held April 25-27, 1989, San Diego, California, U.S.A. (pp. 179–184).

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