Damage distribution and annealing behaviour of high energy 115In+ implanted into Si(100)

1990

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Journal	Nucl. Instrum. Methods Phys. Res. B
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Zhang, B.-X., Wang, Z. L., Schreutelkamp, R., Saris, F. W., Du, A.-Y., & Li, Q. (1990). Damage distribution and annealing behaviour of high energy 115In+ implanted into Si(100). Nucl. Instrum. Methods Phys. Res., Sect B, 48, 425–430.

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