Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

1988

J. Appl. Phys. , Volume 64 p. 4843- 4852

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Kavanagh, K. L., Capano, M. A., Hobbs, L. W., Barbour, J. C., Marée, P. M. J., Schaff, W., … Feenstra, R. M. (1988). Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers. J. Appl. Phys., 64, 4843–4852.

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