Low effective back-surface recombination velocity by boron implantation on 0.3-W-r-type silicon solar cells

1988

J. Appl. Phys. , Volume 63 p. 4683- 4687

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Verhoef, L. A., Zondervan, A., Lindholm, F. A., Spitzer, M. B., & Keavney, C. J. (1988). Low effective back-surface recombination velocity by boron implantation on 0.3-W-r-type silicon solar cells. J. Appl. Phys., 63, 4683–4687.

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