Core level binding energy shifts for reconstructed GaAs (001) surfaces

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Publisher	North-Holland
Editor	M. Averous
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	van der Veen, J. F., Smit, L., Larsen, P. K., & Neave, J. H. (1983). Core level binding energy shifts for reconstructed GaAs (001) surfaces. In M. Averous (Ed.), Proceedings of the 16th International Conference on the Physics of Semiconductors, 6-10 September 1982, Montpellier, France, Part II (pp. 822–824).

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