Dopant redistribution by pulsed-laser annealing of ion-implanted silicon

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Journal	Radiat. Eff.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Hoonhout, D., & Saris, F. W. (1982). Dopant redistribution by pulsed-laser annealing of ion-implanted silicon. Radiat. Eff., 66, 43–59.

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