Threshold energy density for pulsed-laser annealing of ion-implanted silicon

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Journal	J. Appl. Phys.
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Hoonhout, D., & Saris, F. W. (1982). Threshold energy density for pulsed-laser annealing of ion-implanted silicon. J. Appl. Phys., 53, 4379–4388.

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