Channelling studies of defect-impurity interactions of silicon

Additional Metadata
Publisher	Institute of Physics
Editor	R.R. Hasiguti
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Saris, F. W. (1981). Channelling studies of defect-impurity interactions of silicon. In R. R. Hasiguti (Ed.), Defects and Radiation Effects in Semiconductors, 1980 : Invited and Contributed Papers from the Eleventh International Conference on Defects and Radiation Effects in Semiconductors held in Oiso, Japan, 8-11 September 1980 (pp. 111–122).

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