Threshold energy density for pulsed laser annealing of silicon

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Publisher	North Holland
Editor	J.F. Gibbons , L.D. Hess , T.W. Sigmon
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Hoonhout, D., & Saris, F. W. (1981). Threshold energy density for pulsed laser annealing of silicon. In J. F. Gibbons, L. D. Hess, & T. W. Sigmon (Eds.), Laser and Electron-Beam Solid Interactions and Materials Processing : Proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A. (pp. 31–37).

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