Characterization of ion-implanted and pulse-laser-annealed junctions; application to silicon solar cells

1980

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Publisher	Academic Press
Editor	C.W. White , P.S. Peercy
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Michel, J., Fabre, E., Yamada, I., Hoonhout, D., & Saris, F. W. (1980). Characterization of ion-implanted and pulse-laser-annealed junctions; application to silicon solar cells. In C. W. White & P. S. Peercy (Eds.), Laser and Electron Beam Processing of Materials : Papers presented at the Symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Mass., November 27-30, 1979 (pp. 664–670).

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