Segregation effects in pulsed laser annealing of ion-implanted silicon

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Publisher	Academic Press
Editor	C.W. White , P.S. Peercy
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Hoonhout, D., & Saris, F. W. (1980). Segregation effects in pulsed laser annealing of ion-implanted silicon. In C. W. White & P. S. Peercy (Eds.), Laser and Electron Beam Processing of Materials : Papers presented at the Symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Mass., November 27-30, 1979 (pp. 137–142).

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