Dopant segregation in silicon by pulsed-laser annealing: a test case for the concept of thermal melting

1979

Phys. Lett. A , Volume 74 p. 253- 255

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Journal	Phys. Lett. A
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Hoonhout, D., & Saris, F. W. (1979). Dopant segregation in silicon by pulsed-laser annealing: a test case for the concept of thermal melting. Phys. Lett. A, 74, 253–255.

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